⚡ ELT 102 · Digital Logic & Solid State Devices Hands-On Tinkercad Lab
Unit 2 · Solid State Devices · Lab

The BJT: Current-Controlled Switch & Amplifier

Build NPN and PNP transistor circuits in Autodesk Tinkercad Circuits: switch an LED with a whisper of base current, measure the current gain β for yourself, drive the transistor from cutoff through the active region into saturation — then flip the logic upside-down with a PNP high-side switch.

⏱ 90–120 Minutes 🖥 Tinkercad Circuits (Free) 🔧 NPN + PNP · 4 Circuits 📊 Curve-Family & Load-Line Explorer ✅ 6-Question Knowledge Check

Learning Objectives

By the end of this lab, you will be able to:

  • Identify the collector, base, and emitter terminals of NPN and PNP transistors in Tinkercad and on standard schematic symbols, using the emitter arrow to determine polarity.
  • Construct an NPN common-emitter switch that controls an LED, and verify that a small base current controls a much larger collector current.
  • Measure base current IB and collector current IC simultaneously with series ammeters, and calculate the DC current gain β (hFE) = IC / IB.
  • Verify that the base-emitter junction behaves as a forward-biased silicon diode, holding VBE ≈ 0.7 V whenever the transistor conducts.
  • Distinguish the three operating regions — cutoff, active, and saturation — by their measurable signatures: IC ≈ 0, IC = β·IB, and VCE ≈ 0.2 V with IC limited by the collector resistor.
  • Construct a PNP high-side switch and contrast its control logic with the NPN circuit: the PNP turns ON when its base is pulled LOW.
  • Predict circuit currents using IB = (Vin − 0.7 V) / RB and IC(sat) = (VCC − VCE(sat)) / RC, and compare predictions against simulation.

Key Terms & Concepts

Click any card to reveal its definition. Review these before you build.

The Device
Bipolar Junction Transistor
The Device
🔄 Click to reveal definition
Definition
A three-terminal semiconductor built from two PN junctions back-to-back. A small current into one junction (base-emitter) controls a much larger current through the device (collector-emitter) — a current-controlled current valve.
NPN vs PNP
The Device
🔄 Click to reveal definition
Definition
The two sandwich orders. NPN: conducts when the base is ~0.7 V above the emitter; conventional current flows in at collector and base, out the emitter. PNP: the mirror image — conducts when the base is ~0.7 V below the emitter. Same physics, opposite polarities.
Collector · Base · Emitter
The Device
🔄 Click to reveal definition
Definition
The three terminals. The base is the thin control layer; the collector gathers the main current; the emitter launches the carriers. KCL always holds: IE = IC + IB. In Tinkercad, hover over each pin to see its label.
The Emitter Arrow
The Device
🔄 Click to reveal definition
Definition
The schematic's polarity flag, always on the emitter, always pointing in the direction of conventional current flow. NPN: arrow points out ("Not Pointing iN"). PNP: arrow points in ("Points iN Proudly"). It is also a diode arrow — the base-emitter junction it represents drops ~0.7 V like any silicon diode.
Gain & Regions
Current Gain β (hFE)
Gain & Regions
🔄 Click to reveal definition
Definition
The amplification ratio in the active region: β = IC / IB, typically 50–300 for small-signal BJTs. A β of 100 means 50 µA at the base commands 5 mA at the collector. Datasheets call it hFE; it varies part-to-part, which is why good designs never depend on its exact value.
Cutoff Region
Gain & Regions
🔄 Click to reveal definition
Definition
VBE below ~0.6 V: the base-emitter diode is off, IB ≈ 0, so IC ≈ 0. The collector-emitter path acts like an open switch and VCE rises to the full supply. The "OFF" half of digital switching.
Active (Linear) Region
Gain & Regions
🔄 Click to reveal definition
Definition
The amplifier zone: base-emitter forward biased, base-collector reverse biased, and IC = β·IB faithfully. The collector current mirrors (and magnifies) every wiggle of base current — this is where audio amplifiers live.
Saturation Region
Gain & Regions
🔄 Click to reveal definition
Definition
Drive the base hard enough and the collector circuit runs out of voltage: VCE collapses to ≈ 0.1–0.2 V and IC is capped at (VCC − 0.2)/RC no matter how much more base current you supply. β no longer applies. The transistor is a closed switch — the "ON" half of digital switching.
Switch Circuits
Base Resistor RB
Switch Circuits
🔄 Click to reveal definition
Definition
Sets the base current, exactly like the diode lab's current-limiting resistor: IB = (Vin − 0.7 V) / RB. The base-emitter junction is a diode — connect it straight to a supply without RB and it destroys itself.
Low-Side Switch (NPN)
Switch Circuits
🔄 Click to reveal definition
Definition
The NPN sits below the load, switching its ground connection; emitter to ground, load between VCC and collector. Turns ON with a HIGH base signal. The most common transistor switch — simple because the base is referenced to ground.
High-Side Switch (PNP)
Switch Circuits
🔄 Click to reveal definition
Definition
The PNP sits above the load, switching its supply connection; emitter to VCC, load between collector and ground. Turns ON with a LOW base signal (base pulled ~0.7 V below the emitter). Used when the load must stay grounded — automotive circuits, USB power switches.
VCE(sat)
Switch Circuits
🔄 Click to reveal definition
Definition
The small voltage left across a fully-ON transistor, typically 0.1–0.2 V. It is the measurable proof of saturation: measure VCE with a voltmeter — near 0.2 V means closed switch; near VCC means open; in between means active region.

🖥 Tinkercad Setup Notes for Transistor Circuits

You know the routine from the Diode and Rectifier labs — this lab adds the transistor parts and a pushbutton:

Two Resistors, Always
Every circuit in this lab has a base resistor and a collector-side resistor. The base-emitter junction is a forward-biased diode (0.7 V, remember the Diode lab) — no RB means runaway base current. And a saturated transistor is nearly a short — no collector resistor means the LED or the transistor takes the full supply. Tinkercad will show you the smoke either way.

🔧 Virtual Parts List

QtyComponent (Tinkercad name)SettingUsed In
1Breadboard (small)All parts
1Power Supply5.00 V / limit 1 AAll parts
1NPN Transistor (BJT)Parts 1–3
1PNP Transistor (BJT)Part 4
2LED (red)Parts 1, 4 (visible load)
1Resistor220 ΩLED series resistor
1Resistor1 kΩCollector load, Parts 2–3
3Resistor10 kΩ · 100 kΩ · 470 kΩBase resistors, swapped in Part 2
1Pushbutton4-pinParts 1, 4 base control
3Multimeter2 × A · 1 × VI_B, I_C, V_CE / V_BE
~14Wiresred / black / greenAll parts

📐 The Circuits You Will Build

Three schematics, three jobs: the NPN LED switch (Part 1), the β-measurement circuit with both ammeters (Parts 2–3), and the PNP high-side switch (Part 4). Note the emitter arrows — they are your polarity compass all lab long.

+5 V Pushbutton R_B = 10 kΩ LED 220 Ω C B E NPN · arrow points OUT 0 V Button pressed → I_B ≈ (5−0.7)/10k = 430 µA → transistor saturates → LED ON Button released → I_B = 0 → cutoff → open switch → LED OFF
Figure 1 — NPN low-side LED switch (Part 1). The load (LED + 220 Ω) hangs from +5 V down to the collector; the emitter is grounded. A HIGH at the base turns the LED ON. Expected when ON: VCE ≈ 0.2 V (saturated), IC ≈ (5 − 2 − 0.2)/220 ≈ 13 mA.
+5 V R_B (swap: 470k · 100k · 10k) A M1 · I_B (µA) R_C = 1 kΩ A M2 · I_C (mA) B V M3 · V_CE 0 V β = I_C / I_B (valid in active region only) Saturation check: V_CE ≈ 0.2 V and I_C pinned near (5−0.2)/1k ≈ 4.8 mA
Figure 2 — β-measurement circuit (Parts 2–3). No LED here — a clean 1 kΩ collector load makes the numbers easy. M1 reads microamps, M2 milliamps, M3 watches VCE to referee which region you're in. Swapping RB walks the transistor from barely-on (470 kΩ), through the active region (100 kΩ), into hard saturation (10 kΩ).
+5 V E (to +5 V) B C PNP · arrow points IN R_B = 10 kΩ Pushbutton (to ground) LED 220 Ω 0 V Button pressed → base pulled LOW → V_EB ≈ 0.7 V → PNP ON → LED lights Button released → base floats to emitter potential via junction → no I_B → OFF
Figure 3 — PNP high-side switch (Part 4). Everything is mirrored: emitter at the TOP (+5 V), load hanging below the collector, and the button pulls the base down to turn the LED on. Inverted logic relative to Figure 1 — pressing LOW = ON. For a crisp OFF state, add the optional 100 kΩ pull-up from base to +5 V described in the procedure.

Expected Results at a Glance

ConfigurationI_BI_CV_CERegion
NPN switch, button up00≈ 5 VCutoff — open switch, LED off
NPN switch, button pressed≈ 430 µA≈ 13 mA≈ 0.2 VSaturation — closed switch, LED on
β circuit, R_B = 470 kΩ≈ 9 µAβ × 9 µAbetween 1–4 VActive — β measurable here
β circuit, R_B = 10 kΩ≈ 430 µApinned ≈ 4.8 mA≈ 0.2 VSaturation — I_C/I_B is NOT β
PNP switch, button pressed≈ 430 µA (out of base)≈ 13 mA≈ −0.2 VSaturation — LED on
I_B = (V_in − 0.7 V) / R_B I_C(active) = β · I_B I_C(sat) = (V_CC − V_CE(sat)) / R_C β = I_C / I_B (active region only)

🛠 Step-by-Step Procedure

Part 1 — NPN Transistor as a Switch (≈25 min)

  1. Create the workspace. New circuit named "LastName – BJT Lab." Place a small breadboard and a Power Supply set to 5.00 V, wired to the bottom + and − rails.
  2. Identify the pins. Place an NPN Transistor (BJT) straddling three adjacent columns. Hover over each pin and write down which column holds the collector, base, and emitter. Every wiring mistake in this lab starts with skipping this step.
  3. Ground the emitter. Black wire from the emitter column to the − rail.
  4. Build the collector load. From the + rail: red wire → LED anode; LED cathode → 220 Ω resistor → the collector column. (Rail → LED → 220 Ω → collector, matching Figure 1.)
  5. Build the base drive. From the + rail: wire → pushbutton (use diagonal pins) → 10 kΩ base resistor → the base column.
  6. Test the switch. Start the simulation. LED off. Click and hold the pushbutton — LED on. A base current under half a milliamp is switching a collector current nearly thirty times larger. Record both states in Data Table 1.
  7. Measure the proof. Add a voltmeter across collector-emitter. Record VCE with the button up (≈5 V, cutoff/open) and pressed (≈0.2 V, saturated/closed). Then move the voltmeter to base-emitter and confirm VBE ≈ 0.7 V while pressed — the Diode lab's junction, alive inside the transistor.

Part 2 — Measure the Current Gain β (≈25 min)

  1. Rebuild for measurement. Remove the LED, button, and 220 Ω. Install the Figure 2 circuit: 1 kΩ from + rail toward the collector through multimeter M2 (mode A), and 470 kΩ from + rail toward the base through multimeter M1 (mode A). Voltmeter M3 across C-E.
  2. Predict first. IB = (5 − 0.7)/470 k ≈ 9 µA. Write your predicted IB in Data Table 2 before simulating.
  3. Run and record — 470 kΩ. Log IB, IC, and VCE. Compute β = IC/IB. VCE should sit somewhere in the middle volts — active region, so this β is legitimate.
  4. Repeat — 100 kΩ. Swap the base resistor, re-run, record, compute IC/IB again. Compare against the 470 kΩ row: still close to the same β? Check VCE — still comfortably above 0.3 V?
  5. Repeat — 10 kΩ. Swap, run, record. IB jumped to ≈430 µA but IC is stuck near 4.8 mA and VCE collapsed to ≈0.2 V. Compute IC/IB for this row too — it is far below your measured β. That number is not the transistor's gain; it is the collector resistor talking.
  6. State your β. Average the two active-region rows and record your measured β at the bottom of Data Table 2, with one sentence on why the 10 kΩ row was excluded.

Part 3 — Map the Three Regions (≈15 min)

  1. Cutoff. Disconnect the base resistor from the + rail entirely (base open). Run: IC ≈ 0, VCE ≈ 5 V. Record as the "cutoff" row of Data Table 2.
  2. Sweep with the supply. Reinstall the 470 kΩ base resistor. Set the supply to 1.0 V, 2.0 V, 3.5 V, 5.0 V, re-running each time and logging IB, IC, VCE. Watch the transistor wake up as the base drive crosses ~0.7 V and march toward saturation.
  3. Classify. Label every row of Data Table 2 with its region — cutoff, active, or saturation — using the VCE referee: ≈supply = cutoff, ≈0.2 V = saturation, in between = active. Cross-check with the interactive explorer below.

Part 4 — PNP High-Side Switch (≈20 min)

  1. Rebuild with the PNP. Restore the supply to 5.00 V. Place a PNP Transistor (BJT), hover-verify its pinout, and wire Figure 3: emitter to the + rail, LED anode to the collector, LED cathode → 220 Ω → − rail.
  2. Base network. Base → 10 kΩ → pushbutton → − rail. The button now connects the base toward ground, not toward the supply.
  3. Add the pull-up (recommended). A 100 kΩ resistor from base to the + rail. With the button up this holds VEB = 0 and guarantees a clean OFF; without it the base floats when released, and a floating base is bad practice in real hardware.
  4. Test the inverted logic. Run. Button up: LED off. Button pressed (base pulled LOW): LED on. Record both states, including VCE — note its sign relative to the NPN circuit — in Data Table 3.
  5. Articulate the mirror. One sentence for the report: state the turn-on condition of each transistor type in terms of where the base must sit relative to the emitter (±0.7 V).
  6. Wrap up. Complete the Analysis Questions and the Knowledge Check, then Print/Save your report with the data tables filled in.
Troubleshooting
LED never lights (NPN)? Hover-check the pinout first — collector and emitter swapped is the classic error (the transistor "works" in reverse with pathetic gain). Then check LED polarity. LED always on (PNP)? The base is floating or the button wiring is on same-side pins — add the pull-up from step 3. I_B reads zero but LED lights? Your ammeter is bypassed by a parallel wire — current takes the meterless path. Meters read negative? Leads reversed; the magnitude is still valid, and for the PNP the signs genuinely are opposite — that's data, not error.

📋 Data Tables

Type readings directly into the tables — they persist when you print this page.

Data Table 1 — NPN LED Switch (Part 1)

Button stateLEDV_CEV_BERegion & switch analogy
Released
Pressed

Data Table 2 — β Measurement & Region Map (Parts 2–3, R_C = 1 kΩ)

ConditionPredicted I_BMeasured I_BMeasured I_CV_CEI_C / I_BRegion
Base open (cutoff)0
R_B = 470 kΩ · 5 V
R_B = 100 kΩ · 5 V
R_B = 10 kΩ · 5 V
470 kΩ · supply 2.0 V
470 kΩ · supply 1.0 V
Measured β (average of active-region rows only):

Data Table 3 — PNP High-Side Switch (Part 4)

Button stateBase pulled toLEDV_CE (note sign)Turn-on condition satisfied?
Released
Pressed

📈 Interactive BJT Curve & Load-Line Explorer

This companion simulator models the Figure 2 measurement circuit (VCC = 5 V). The navy curves are the transistor's characteristic family — collector current versus VCE for different base currents. The amber dashed line is the load line imposed by RC, and the red dot is the operating point where the two must agree. Drive the base and watch the Q-point slide from cutoff, up the load line through the active region, and pile into saturation.

What To Notice
With RB = 470 kΩ, drag the β slider — the Q-point moves, because in the active region the transistor's gain sets IC. Now switch to RB = 10 kΩ and drag β again: the Q-point barely budges. A saturated switch doesn't care what β is — the collector resistor rules. That indifference is exactly why switching circuits are designed to saturate: they work identically with any transistor from the parts bin. Note also that the load line's ends never move unless you change RC or VCC — the transistor must operate somewhere on that line, always.

✍ Analysis Questions

Answer in complete sentences in your lab report.

  1. In Part 1, compute the ratio IC/IB for the pressed-button state using your Data Table 1 values and the expected currents. Why is this ratio smaller than the β you measured in Part 2?
  2. Using your Data Table 2 active-region rows, show the β calculation for each and explain why the two values agree (or account for any difference).
  3. For the RB = 10 kΩ row, IC/IB was far below β. What physically limits IC in this condition? Support your answer with the measured VCE.
  4. The base-emitter junction measured ≈0.7 V whenever the transistor conducted. Connect this observation to the Basic Diode lab: what is the base-emitter junction, structurally?
  5. State the turn-on condition for the NPN and the PNP in one sentence each, referencing the base-emitter voltage polarity. Why is the PNP called an "active-LOW" device?
  6. Your thermostat's 5 V logic output must switch a 12 V fan whose chassis-grounded wiring cannot be interrupted on the ground side. Which transistor type and switch topology from this lab fits, and why?
  7. A classmate reports β = 11 measured with RB = 10 kΩ and concludes the transistor is defective. Using the load-line explorer or your data, explain their error and describe the measurement conditions they should use instead.

Key Facts Reference Box

NPN turn-on
Base ≈ 0.7 V ABOVE emitter
PNP turn-on
Base ≈ 0.7 V BELOW emitter
Emitter arrow
NPN out · PNP in · = current direction
Current gain
β = I_C / I_B (active region only)
Terminal currents (KCL)
I_E = I_C + I_B
Base current design
I_B = (V_in − 0.7 V) / R_B
Saturation current
I_C(sat) = (V_CC − 0.2 V) / R_C
Region referee: V_CE
≈V_CC cutoff · mid active · ≈0.2 V sat
NPN switch topology
Low-side · active-HIGH
PNP switch topology
High-side · active-LOW

Interactive Knowledge Check

Six questions drawn directly from the lab. Select an answer for each, then press Grade My Quiz.

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