Learning Objectives
By the end of this lab, you will be able to:
- Identify the collector, base, and emitter terminals of NPN and PNP transistors in Tinkercad and on standard schematic symbols, using the emitter arrow to determine polarity.
- Construct an NPN common-emitter switch that controls an LED, and verify that a small base current controls a much larger collector current.
- Measure base current IB and collector current IC simultaneously with series ammeters, and calculate the DC current gain β (hFE) = IC / IB.
- Verify that the base-emitter junction behaves as a forward-biased silicon diode, holding VBE ≈ 0.7 V whenever the transistor conducts.
- Distinguish the three operating regions — cutoff, active, and saturation — by their measurable signatures: IC ≈ 0, IC = β·IB, and VCE ≈ 0.2 V with IC limited by the collector resistor.
- Construct a PNP high-side switch and contrast its control logic with the NPN circuit: the PNP turns ON when its base is pulled LOW.
- Predict circuit currents using IB = (Vin − 0.7 V) / RB and IC(sat) = (VCC − VCE(sat)) / RC, and compare predictions against simulation.
Key Terms & Concepts
Click any card to reveal its definition. Review these before you build.
🖥 Tinkercad Setup Notes for Transistor Circuits
You know the routine from the Diode and Rectifier labs — this lab adds the transistor parts and a pushbutton:
- Transistors: search "NPN" and "PNP" in the parts panel — the parts are named NPN Transistor (BJT) and PNP Transistor (BJT). Hover over each of the three pins to see Tinkercad's collector / base / emitter labels before wiring anything. Do not assume pin order — verifying pinout is the habit that saves real hardware.
- Pushbutton: the 4-pin button connects its two sides when pressed; pins on the same side are already joined. Wire diagonal pins to be safe.
- LED polarity: the bent lead / flat side is the cathode. Anode toward positive. A red LED drops about 1.8–2 V at 10 mA.
- Two ammeters at once: Part 2 measures IB and IC simultaneously — one multimeter in A mode in the base loop, another in the collector loop. Expect IB in microamps and IC in milliamps; the unit prefix difference IS the story of this lab.
- β varies: Tinkercad's generic BJT model has a fixed β in the neighborhood of 100–200, but treat it as unknown — your job in Part 2 is to measure it. Real parts of the same number vary 2:1 or more.
🔧 Virtual Parts List
| Qty | Component (Tinkercad name) | Setting | Used In |
|---|---|---|---|
| 1 | Breadboard (small) | — | All parts |
| 1 | Power Supply | 5.00 V / limit 1 A | All parts |
| 1 | NPN Transistor (BJT) | — | Parts 1–3 |
| 1 | PNP Transistor (BJT) | — | Part 4 |
| 2 | LED (red) | — | Parts 1, 4 (visible load) |
| 1 | Resistor | 220 Ω | LED series resistor |
| 1 | Resistor | 1 kΩ | Collector load, Parts 2–3 |
| 3 | Resistor | 10 kΩ · 100 kΩ · 470 kΩ | Base resistors, swapped in Part 2 |
| 1 | Pushbutton | 4-pin | Parts 1, 4 base control |
| 3 | Multimeter | 2 × A · 1 × V | I_B, I_C, V_CE / V_BE |
| ~14 | Wires | red / black / green | All parts |
📐 The Circuits You Will Build
Three schematics, three jobs: the NPN LED switch (Part 1), the β-measurement circuit with both ammeters (Parts 2–3), and the PNP high-side switch (Part 4). Note the emitter arrows — they are your polarity compass all lab long.
Expected Results at a Glance
| Configuration | I_B | I_C | V_CE | Region |
|---|---|---|---|---|
| NPN switch, button up | 0 | 0 | ≈ 5 V | Cutoff — open switch, LED off |
| NPN switch, button pressed | ≈ 430 µA | ≈ 13 mA | ≈ 0.2 V | Saturation — closed switch, LED on |
| β circuit, R_B = 470 kΩ | ≈ 9 µA | β × 9 µA | between 1–4 V | Active — β measurable here |
| β circuit, R_B = 10 kΩ | ≈ 430 µA | pinned ≈ 4.8 mA | ≈ 0.2 V | Saturation — I_C/I_B is NOT β |
| PNP switch, button pressed | ≈ 430 µA (out of base) | ≈ 13 mA | ≈ −0.2 V | Saturation — LED on |
🛠 Step-by-Step Procedure
Part 1 — NPN Transistor as a Switch (≈25 min)
- Create the workspace. New circuit named "LastName – BJT Lab." Place a small breadboard and a Power Supply set to 5.00 V, wired to the bottom + and − rails.
- Identify the pins. Place an NPN Transistor (BJT) straddling three adjacent columns. Hover over each pin and write down which column holds the collector, base, and emitter. Every wiring mistake in this lab starts with skipping this step.
- Ground the emitter. Black wire from the emitter column to the − rail.
- Build the collector load. From the + rail: red wire → LED anode; LED cathode → 220 Ω resistor → the collector column. (Rail → LED → 220 Ω → collector, matching Figure 1.)
- Build the base drive. From the + rail: wire → pushbutton (use diagonal pins) → 10 kΩ base resistor → the base column.
- Test the switch. Start the simulation. LED off. Click and hold the pushbutton — LED on. A base current under half a milliamp is switching a collector current nearly thirty times larger. Record both states in Data Table 1.
- Measure the proof. Add a voltmeter across collector-emitter. Record VCE with the button up (≈5 V, cutoff/open) and pressed (≈0.2 V, saturated/closed). Then move the voltmeter to base-emitter and confirm VBE ≈ 0.7 V while pressed — the Diode lab's junction, alive inside the transistor.
Part 2 — Measure the Current Gain β (≈25 min)
- Rebuild for measurement. Remove the LED, button, and 220 Ω. Install the Figure 2 circuit: 1 kΩ from + rail toward the collector through multimeter M2 (mode A), and 470 kΩ from + rail toward the base through multimeter M1 (mode A). Voltmeter M3 across C-E.
- Predict first. IB = (5 − 0.7)/470 k ≈ 9 µA. Write your predicted IB in Data Table 2 before simulating.
- Run and record — 470 kΩ. Log IB, IC, and VCE. Compute β = IC/IB. VCE should sit somewhere in the middle volts — active region, so this β is legitimate.
- Repeat — 100 kΩ. Swap the base resistor, re-run, record, compute IC/IB again. Compare against the 470 kΩ row: still close to the same β? Check VCE — still comfortably above 0.3 V?
- Repeat — 10 kΩ. Swap, run, record. IB jumped to ≈430 µA but IC is stuck near 4.8 mA and VCE collapsed to ≈0.2 V. Compute IC/IB for this row too — it is far below your measured β. That number is not the transistor's gain; it is the collector resistor talking.
- State your β. Average the two active-region rows and record your measured β at the bottom of Data Table 2, with one sentence on why the 10 kΩ row was excluded.
Part 3 — Map the Three Regions (≈15 min)
- Cutoff. Disconnect the base resistor from the + rail entirely (base open). Run: IC ≈ 0, VCE ≈ 5 V. Record as the "cutoff" row of Data Table 2.
- Sweep with the supply. Reinstall the 470 kΩ base resistor. Set the supply to 1.0 V, 2.0 V, 3.5 V, 5.0 V, re-running each time and logging IB, IC, VCE. Watch the transistor wake up as the base drive crosses ~0.7 V and march toward saturation.
- Classify. Label every row of Data Table 2 with its region — cutoff, active, or saturation — using the VCE referee: ≈supply = cutoff, ≈0.2 V = saturation, in between = active. Cross-check with the interactive explorer below.
Part 4 — PNP High-Side Switch (≈20 min)
- Rebuild with the PNP. Restore the supply to 5.00 V. Place a PNP Transistor (BJT), hover-verify its pinout, and wire Figure 3: emitter to the + rail, LED anode to the collector, LED cathode → 220 Ω → − rail.
- Base network. Base → 10 kΩ → pushbutton → − rail. The button now connects the base toward ground, not toward the supply.
- Add the pull-up (recommended). A 100 kΩ resistor from base to the + rail. With the button up this holds VEB = 0 and guarantees a clean OFF; without it the base floats when released, and a floating base is bad practice in real hardware.
- Test the inverted logic. Run. Button up: LED off. Button pressed (base pulled LOW): LED on. Record both states, including VCE — note its sign relative to the NPN circuit — in Data Table 3.
- Articulate the mirror. One sentence for the report: state the turn-on condition of each transistor type in terms of where the base must sit relative to the emitter (±0.7 V).
- Wrap up. Complete the Analysis Questions and the Knowledge Check, then Print/Save your report with the data tables filled in.
📋 Data Tables
Type readings directly into the tables — they persist when you print this page.
Data Table 1 — NPN LED Switch (Part 1)
| Button state | LED | V_CE | V_BE | Region & switch analogy |
|---|---|---|---|---|
| Released | ||||
| Pressed |
Data Table 2 — β Measurement & Region Map (Parts 2–3, R_C = 1 kΩ)
| Condition | Predicted I_B | Measured I_B | Measured I_C | V_CE | I_C / I_B | Region |
|---|---|---|---|---|---|---|
| Base open (cutoff) | 0 | — | ||||
| R_B = 470 kΩ · 5 V | ||||||
| R_B = 100 kΩ · 5 V | ||||||
| R_B = 10 kΩ · 5 V | ||||||
| 470 kΩ · supply 2.0 V | ||||||
| 470 kΩ · supply 1.0 V | ||||||
| Measured β (average of active-region rows only): | ||||||
Data Table 3 — PNP High-Side Switch (Part 4)
| Button state | Base pulled to | LED | V_CE (note sign) | Turn-on condition satisfied? |
|---|---|---|---|---|
| Released | ||||
| Pressed |
📈 Interactive BJT Curve & Load-Line Explorer
This companion simulator models the Figure 2 measurement circuit (VCC = 5 V). The navy curves are the transistor's characteristic family — collector current versus VCE for different base currents. The amber dashed line is the load line imposed by RC, and the red dot is the operating point where the two must agree. Drive the base and watch the Q-point slide from cutoff, up the load line through the active region, and pile into saturation.
✍ Analysis Questions
Answer in complete sentences in your lab report.
- In Part 1, compute the ratio IC/IB for the pressed-button state using your Data Table 1 values and the expected currents. Why is this ratio smaller than the β you measured in Part 2?
- Using your Data Table 2 active-region rows, show the β calculation for each and explain why the two values agree (or account for any difference).
- For the RB = 10 kΩ row, IC/IB was far below β. What physically limits IC in this condition? Support your answer with the measured VCE.
- The base-emitter junction measured ≈0.7 V whenever the transistor conducted. Connect this observation to the Basic Diode lab: what is the base-emitter junction, structurally?
- State the turn-on condition for the NPN and the PNP in one sentence each, referencing the base-emitter voltage polarity. Why is the PNP called an "active-LOW" device?
- Your thermostat's 5 V logic output must switch a 12 V fan whose chassis-grounded wiring cannot be interrupted on the ground side. Which transistor type and switch topology from this lab fits, and why?
- A classmate reports β = 11 measured with RB = 10 kΩ and concludes the transistor is defective. Using the load-line explorer or your data, explain their error and describe the measurement conditions they should use instead.
Key Facts Reference Box
Interactive Knowledge Check
Six questions drawn directly from the lab. Select an answer for each, then press Grade My Quiz.